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Article
The effect of temperature of operation on the Turn-on Time Delay of Semiconductor Lasers

Author: M. R. Hassan
Journal: Journal of Basrah Researches (Sciences) مجلة ابحاث البصرة ( العلميات) ISSN: 18172695 Year: 2008 Volume: 34 Issue: 1A Pages: 8-19
Publisher: Basrah University جامعة البصرة

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Abstract

In this paper, the effect of temperature of operation on the turn-on time delay, td, of semiconductor laser has been re-studied theoretically. We proposed a model to calculate the temperature dependence (TD) of td according to the TD of laser cavity parameters. An accurate analytical expression of td as a function of temperature has been driven in term of TD of threshold carrier density. The TD of threshold carrier density was calculated according to the TD of cavity parameters and not by the well-known exponential Pankove relation via the use of characteristics temperature and current. A very good agreement between the values of td calculated by the proposed model and the numerical method through the shown simulation results. We also re-drived approximated expressions of td as a function of temperature according to this model.

في هذا البحث, تاثير درجه حرارة العمل على التاخير الزمني لبدء التشغيل لاشباه الموصلات الليزريه, قد اعيد دراسته نظريا دقيقه لحسا. اقترحنا صيغه لحساب الاعتماديه الحرارية لزمن بدء التشغيل بموجب الاعتمادية الحراريه لبارمترات الفجوة الليزريه. تم اشتقاق صيغه تحليلية ب التاخير الزمني لبدء التشغيل كداله لدرجه الحرارة من خلال الاعتماديه الحراريه لكثافة الحاملات عند مستوى العتبة والتي تم حسابها اعتمادا على الاعتماديه الحراريه على بارمترات الليزر وليس اعتمادا على علاقه بانكوف الاسيه المعروفه لدرجه الحرارة المميزة والتيار المميز. نتائج المحاكاة للبحث اظهرت توافق كبير بين قيم زمن بدء التشغيل المحسوبه بواسطه الصيغه المقترحه وتلك المحسوبه عن طريق الطريقه العدديه. ايضا اعدنا اشتقاق علاقات تقريبية للتاخير الزمني لبدء التشغيل حسب الصيغه المقترحه.


Article
Delay Time Reduction in VCSELs by Optimizing Laser Parameters

Author: Hisham K. Hisham
Journal: Iraqi Journal for Electrical And Electronic Engineering المجلة العراقية للهندسة الكهربائية والالكترونية ISSN: 18145892 Year: 2016 Volume: 12 Issue: 2 Pages: 146-154
Publisher: Basrah University جامعة البصرة

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Abstract

An extensive analysis on reducing the turn-on time delay (ton) in vertical cavity surface emitting lasers (VCSELs) has conducted successfully by considering all the recombination rate coefficients R(N) Besides the R(N) coefficients, the impact of other laser parameters such as, injection current (Iinj), laser cavity volume (V),mirror reflectivity (R), and operating temperature (T) also have investigated. Unlike pervious studies, the temperature dependence (TD) of ton is calculated according to TD of laser parameters instead of well-known Pankove relationship. Results showed that, ton can be reduced by increasing the Iinj and/or the Ni. Meanwhile, the ton increases by increasing the R(N) coefficients. Also, results showed that the ton can be reduced by increasing the R-level or by optimizing laser cavity volume.

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